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Other articles related with "trench metal-oxide-semiconductor field-effect transistor (MOSFET)"：
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58503 |
Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南) |
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Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation |
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Chin. Phys. B
2019 Vol.28 (5): 58503-058503
[Abstract]
(665)
[HTML 1 KB]
[PDF 1019 KB]
(212)
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